>2023

1. Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices

   Xuefei Li, Xinhang Shi, Damiano Marian, David Soriano, Teresa Cusati, Giuseppe Iannaccone, Gianluca Fiori, Qi Guo, Wenjie Zhao, Yanqing Wu 

   SCIENCE ADVANCES 15 Feb 2023 Vol 9, Issue 7

1. Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors

   Xinhang Shi, Xuefei Li, Qi Guo, Min Zeng, Xin Wang, and Yanqing Wu 

   Applied Physics Reviews 10, 011405 (2023)

>2022

1. Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress

   Qianlan Hu, Shenwu Zhu, Chengru Gu, Shiyuan Liu, Min Zeng, Yanqing Wu 

   SCIENCE ADVANCES 23 Dec 2022 Vol 8, Issue 51

1. Capacitorless DRAM Cells Based on High-performance Indium-Tin-Oxide Transistors with Record Data Retention and Reduced Write Latency

   Qianlan Hu, Chengru Gu, Shenwu Zhu, Qijun Li, Anyu Tong, Jiyang Kang, Ru Huang and Yanqing Wu 

   IEEE Electron Device Letters（2022）

1. High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel

   Qianlan Hu, Shenwu Zhu, Chengru Gu, and Yanqing Wu 

   Applied Physics Letters（Appl. Phys. Lett. 121, 242101 (2022)）

1. Record-high 2Pr = 60 μC/cm2 by Sub-5ns Switching Pulse in Ferroelectric Lanthanum-doped HfO2 with Large Single Grain of Orthorhombic Phase > 38 nm

   Tianyue Fu, Min Zeng, Shiyuan Liu, Honggang Liu, Ru Huang and Yanqing Wu 

   2022 IEEE International Electron Devices Meeting (IEDM)

1. High-Performance Bilayer WSe2 pFET with Record Ids = 425 μA/μm and Gm = 100 μS/μm at Vds = -1 V By Direct Growth and Fabrication on SiO2 Substrate

   Xinhang Shi, Xin Wang, Shiyuan Liu, Qi Guo, Lei Sun, Xuefei Li, Ru Huang, and Yanqing Wu 

   2022 IEEE International Electron Devices Meeting (IEDM)

1. Top-Gate CVD WSe2 pFETs with Record-High Id~594 μA/μm, Gm~244 μS/μm and WSe2/MoS2 CFET based Half-adder Circuit Using Monolithic 3D Integration

   Xiong Xiong, Shiyuan Liu, Honggang Liu, Yang Chen, Xinhang Shi, Xin Wang, Xuefei Li, Ru Huang and Yanqing Wu 

   2022 IEEE International Electron Devices Meeting (IEDM)

1. BEOL-Compatible High-Performance a-IGZO Transistors with Record high Ids,max = 1207 μA/μm and on-off ratio exceeding 10^11 at Vds = 1V

   Qijun Li, Chengru Gu, Shenwu Zhu, Qianlan Hu,Wenjie Zhao, Xuefei Li, Ru Huang and Yanqing Wu 

   2022 IEEE International Electron Devices Meeting (IEDM)

1. Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85 C at Zero V-hold with Sub-10 ns Speed and 3-bit Operation

   Qianlan Hu, Qijun Li, Shenwu Zhu, Chengru Gu, Shiyuan Liu, Ru Huang and Yanqing Wu 

   2022 IEEE International Electron Devices Meeting (IEDM)

1. Van der Waals Epitaxial Trilayer MoS2 Crystals for High-Speed Electronics

   Xuefei Li,Zhenfeng Zhang,Tingting Gao,Xinhang Shi,Chengru Gu,Yanqing Wu 

   Adv. Funct. Mater. 2022, 2208091

1. Improved Self-Heating in Short-Channel Monolayer WS2 Transistors with High-Thermal Conductivity BeO Dielectrics

   Xinhang Shi , Xuefei Li, Qi Guo, Han Gao, Min Zeng, Yibo Han, Shiwei Yan, and Yanqing Wu 

   Nano Letters Article ASAP

1. How to report and benchmark emerging field-effect transistors

   Cheng, Z., Pang, CS., Wang, P.,Wu Y. et al. 

   Nat Electron 5, 416–423 (2022)

>2021

1. Demonstration of Vertically-stacked CVD Monolayer Channels: MoS2 Nanosheets GAA-FET with Ion>700 µA/µm and MoS2/WSe2 CFET

   Xiong Xiong; Anyu Tong; Xin Wang; Shiyuan Liu; Xuefei Li; Ru Huang; Yanqing Wu 

   2021 IEEE International Electron Devices Meeting (IEDM)

1. Nonvolatile Logic and Ternary Content-Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors

   Xiong Xiong, Jiyang Kang, Shiyuan Liu, Anyu Tong, Tianyue Fu, Xuefei Li, Ru Huang, and Yanqing Wu 

   Adv. Mater. 2021, 2106321

1. High-performance n-type transistors based on CVD-grown large-domain trilayer WSe2

   Xin Wang, Xinhang Shi, Chengru Gu, Qi Guo, Honggang Liu, Xuefei Li, and Yanqing Wu 

   APL Mater. 9, 071109 (2021) (pdf)

1. Tunable synaptic devices based on ambipolar MoTe2 transistor

   Tingting Gao, Xuefei Li, Linxin Han and Yanqing Wu 

   2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021, pp. 1-3, doi: 10.1109/EDTM50988.2021.9421022. (pdf)

1. Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress

   Qianlan Hu, Chengru Gu, Dan Zhan, Xuefei Li , and Yanqing Wu 

   IEEE Journal of the Electron Devices Society, vol. 9, pp. 511-516, 2021 (pdf)

1. Improved low-frequency noise in CVD bilayer MoS2 field-effect transistors

   Qingguo Gao, Chongfu Zhang, Zichuan Yi, Xinjian Pan, Feng Chi, Liming Liu, Xuefei Li, Yanqing Wu 

   Appl. Phys. Lett. 118, 153103 (2021) (pdf)

1. Performance Optimization of Atomic Layer Deposited ZnO Thin-film Transistors by Vacuum Annealing

   Mengfei Wang, Dan Zhan, Xin Wanga, Qianlan Hu, Chengru Gu, Xuefei Li, Yanqing Wu 

   IEEE Electron Device Letters, 2021 (pdf)

>2020

1. 10-nm Channel Length Indium-Tin-Oxide transistors with Ion = 1860 μA/μm, Gm = 1050 μS/μm at Vds = 1 V with BEOL Compatibility

   Shengman Li, Chengru Gu, Xuefei Li, Ru Huang, Yanqing Wu 

   2020 IEEE International Electron Devices Meeting (IEDM) 40.5. 1-40.5. 4 (pdf)

1. Light-stimulated artificial synapse based on Schottky barrier modulated CVD Mos2 transistors

   Qianlan Hu, Yanqing Wu 

   2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) (pdf)

1. High-Frequency Performance of MoS2 Transistors at Cryogenic Temperatures

   Qingguo Gao, Chongfu Zhang, Zhenfeng Zhang, Zichuan Yi, Xinjian Pan, Feng Chi, Liming Liu, Xuefei Li, Yanqing Wu 

   2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) (pdf)

1. An ambipolar homojunction with options

   Yanqing Wu 

   Nature Electronics volume 3, pages356–357(2020) (pdf)

1. Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors

   Mengchuan Tian, Qianlan Hu, Chengru Gu, Xiong Xiong, Zhenfeng Zhang, Xuefei Li, Yanqing Wu 

   ACS Applied Materials Interfaces, 12, 15, 17686-17690(2020) (pdf)

1. A transverse tunnelling field-effect transistor made from a van der Waals heterostructure

   Xiong Xiong, Mingqiang Huang, Ben Hu, Xuefei Li, Fei Liu, Sichao Li, Mengchuan Tian, Tiaoyang Li, Jian Song & Yanqing Wu  

   Nature Electronics, 3, 106–112 (2020) (pdf)

1. Reconfigurable Logic‐in‐Memory and Multilingual Artificial Synapses Based on 2D Heterostructures

   Xiong Xiong Jiyang Kang Qianlan Hu Chengru Gu Tingting Gao Xuefei Li Yanqing Wu 

   Advanced Functional Materials,30, 11, 1909645 (2020) (pdf)

>2019

1. BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with Ion = 970 μA/μm and On/off Ratio Near 10^11 at Vds = 0.5 V

   Shengman Li, Mengchuan Tian, Chengru Gu, Runsheng Wang, Mengfei Wang, Xiong Xiong, Xuefei Li,Ru Huang and Yanqing Wu  

   2019 IEEE International Electron Devices Meeting (IEDM), DOI: 10.1109/IEDM19573.2019.8993488 (pdf)

1. High Performance Gigahertz Flexible Radio Frequency Transistors with Extreme Bending Conditions

   Mengfei Wang, Mengchuan Tian, Zhenfeng Zhang, Shengman Li, Runsheng Wang, Chengru Gu,Xiaoyu Shan, Xiong Xiong, Xuefei Li, Ru Huang and Yanqing Wu  

   Mengfei Wang, Mengchuan Tian, Zhenfeng Zhang, Shengman Li, Runsheng Wang, Chengru Gu,Xiaoyu Shan, Xiong Xiong, Xuefei Li, Ru Huang and Yanqing Wu (pdf)

1. Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

   Qianlan Hu, Ben Hu, Chengru Gu, Tiaoyang Li, Sichao Li , Shengman Li, Xuefei Li , and Yanqing Wu 

   IEEE Transactions on Electron Devices ( Volume: 66 , Issue: 11 , Nov. 2019 ) (pdf)

1. Nanometre-thin indium tin oxide for advanced high-performance electronics

   Shengman Li, Mengchuan Tian, Qingguo Gao, Mengfei Wang, Tiaoyang Li, Qianlan Hu, Xuefei Li & Yanqing Wu  

   Nature Materials volume 18, pages1091–1097(2019). Selected in Research Highlights of Nature News & Views (pdf)

1. High-speed black phosphorus field-effect transistors approaching ballistic limit

   Xuefei Li, Zhuoqing Yu, Xiong Xiong, Tiaoyang Li, Tingting Gao, Runsheng Wang, Ru Huang and Yanqing Wu 

   Science Advances.Vol. 5, no. 6, eaau3194. (2019) (pdf)

1. Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D-3D heterostructure

   Tiaoyang Li , Xuefei Li , Mengchuan Tian , Qianlan Hu , Xin Wang , Sichao Li and Yanqing Wu 

   Nanoscale 11, 4701-4706 (2019) (pdf)

1. Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors

   Mengchuan Tian, Ben Hu, Haifang Yang, Chengchun Tang, Mengfei Wang, Qingguo Gao, Xiong Xiong, Zhenfeng Zhang, Tiaoyang Li, Xuefei Li, Changzhi Gu, Yanqing Wu 

   Advanced Electronic Materials，2019, 1800711 (pdf)

1. High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition

   Mengfei Wang, Xuefei Li, Xiong Xiong, Jian Song, Chengru Gu, Dan Zhan, Qianlan Hu, Shengman Li and Yanqing Wu 

   IEEE Electron Device Letters 40, 3, 419-422 (2019) (pdf)

1. Improvement of Conversion Loss of Resistive Mixers Using Bernal-stacked Bilayer Graphene

   Mengchuan Tian ; Xuefei Li ; Qingguo Gao ; Xiong Xiong ; Zhenfeng Zhang ; Yanqing Wu 

   IEEE Electron Device Letters 40, 325 - 328 (2019) (pdf)

1. Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiOx as Gate Dielectric

   Sichao Li ; Qianlan Hu ; Xin Wang ; Tiaoyang Li ; Xuefei Li ; Yanqing Wu 

   IEEE Electron Device Letters 40, 295 - 298 (2019) (pdf)

1. Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

   Xuefei Li, Jingyi Wu, Yunsheng Ye, Shengman Li, Tiaoyang Li, Xiong Xiong, Xiaole Xu, Tingting Gao, Xiaolin Xie, and Yanqing Wu 

   ACS Applied Materials Interfaces 11 (1), 1587–1594 (2019) (pdf)

>2018

1. Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric

   Lin Liang, Wei Li, Sichao Li, Xuefei Li, and Yanqing Wu 

   AIP Advances 8, 125314 (2018) (pdf)

1. Scalable high performance radio frequency electronics based on large domain bilayer MoS2

   Qingguo Gao, Zhenfeng Zhang, Xiaole Xu, Jian Song, Xuefei Li & Yanqing Wu 

   Nature Communications 9, 4778 (2018) (pdf)

1. High-performance transistors based on monolayer CVD MoS2 grown on molten glass

   Zhenfeng Zhang, Xiaole Xu, Jian Song, Qingguo Gao, Sichao Li, Qianlan Hu, Xuefei Li, and Yanqing Wu 

   Applied Physics Letters 113, 202103 (2018) (pdf)

1. Optimized Transport of Black Phosphorus Top Gate Transistors using Alucone Dielectrics

   Xuefei Li ; Xiong Xiong ; Tiaoyang Li ; Tingting Gao ; Yanqing Wu 

   IEEE Electron Device Letters 39, 12, 1952 - 1955 (2018) (pdf)

1. Channel Engineering of Normally-Off AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High-κ Dielectric

   Qianlan Hu, Sichao Li, Tiaoyang Li, Xin Wang, Xuefei Li and Yanqing Wu 

   IEEE Electron Device Letters 39, 9, 1377 - 1380 (2018) (pdf)

1. Black Phosphorus Radio Frequency Electronics at Cryogenic Temperatures

   Tiaoyang Li, Mengchuan Tian, Shengman Li, Mingqiang Huang, Xiong Xiong, Qianlan Hu, Sichao Li, Xuefei Li, Yanqing Wu 

   Advanced Electronic Materials 4, 1800138 (2018) (pdf)

1. Multifunctional devices from asymmetry

   Yanqing Wu 

   Nature Electronics 1, 331–332 (2018) (pdf)

1. High Performance CVD Bernal-Stacked Bilayer Graphene Transistors for Amplifying and Mixing Signals at High Frequencies

   Mengchuan Tian, Xuefei Li, Tiaoyang Li, Qingguo Gao, Xiong Xiong, Qianlan Hu, Mengfei Wang, Xin Wang, and Yanqing Wu 

   ACS Applied Materials Interfaces 10 (24), 20219–20224 (2018) (pdf)

1. Optimized Transport Properties in Lithium Doped Black Phosphorus Transistors

   Tingting Gao, Xuefei Li, Xiong Xiong, Mingqiang Huang, Tiaoyang Li, and Yanqing Wu 

   IEEE Electron Device Letters 39, 5, 769 - 772 (2018) (pdf)

1. Anomalous Temperature Dependence in Metal–Black Phosphorus Contact

   Xuefei Li, Roberto Grassi, Sichao Li, Tiaoyang Li, Xiong Xiong, Tony Low, and Yanqing Wu 

   Nano Letters 18 (1), 26–31 (2018) (pdf)

1. High Performance Black Phosphorus Electronic and Photonic Devices with HfLaO Dielectric

   Xiong Xiong, Xuefei Li, Mingqiang Huang, Tiaoyang Li, Tingting Gao, and Yanqing Wu 

   IEEE Electron Device Letters 39, 1, 127 - 130 (2018) (pdf)

1. Tunable Low-Frequency Noise in Dual-Gate MoS2 Transistors

   Xuefei Li, Tiaoyang Li, Zhenfeng Zhang, Xiong Xiong, Sichao Li, and Yanqing Wu 

   IEEE Electron Device Letters 39, 131-134 (2018) (pdf)

>2017

1. Gigahertz frequency doubler based on millimeter-scale single-crystal graphene

   Gao Qing-Guo, Tian Meng-Chuan, Li Si-Chao, Li Xue-Fei, Wu Yan-Qing 

   Acta Phys. Sin. 66, 21, 217305 (2017) (pdf)

1. Effect of Dielectric Interface on the Performance of MoS2 Transistors

   Xuefei Li, Xiong Xiong, Tiaoyang Li, Sichao Li, Zhenfeng Zhang, and Yanqing Wu 

   ACS Applied Materials and Interfaces 9 (51), 44602–44608 (2017) (pdf)

1. Multifunctional high-performance van der Waals heterostructures

   Mingqiang Huang, Shengman Li, Zhenfeng Zhang, Xiong Xiong, Xuefei Li & Yanqing Wu 

   Nature Nanotechnology 12, 1148–1154 (2017) (pdf)

1. Short-Channel Graphene Mixer With High Linearity

   Qingguo Gao, Xuefei Li, Mengchuan Tian, Xiong Xiong, Zhenfeng Zhang, and Yanqing Wu 

   IEEE Electron Device Letters 38, 1168 - 1171 (2017) (pdf)

1. High field transport of high performance black phosphorus transistors

   Tiaoyang Li, Zhenfeng Zhang, Xuefei Li, Mingqiang Huang, Sichao Li, Shengman Li, and Yanqing Wu 

   Applied Physics Letters 110, 163507 (2017) (pdf)

1. Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices

   Xuefei Li, Xiong Xiong, and Yanqing Wu 

   Chinese Physics B, Vol. 26, No. 3 (2017) 037307 (pdf)

>2016

1. Development of two-dimensional materials for electronic applications

   Xuefei Li, Tingting Gao, Yanqing Wu 

   Science China Information Sciences 59(6):1-14 (2016) (pdf)

1. Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors

   Xuefei Li, Yuchen Du, Mengwei Si, Lingming Yang, Sichao Li, Tiaoyang Li, Xiong Xiong, Peide Ye and Yanqing Wu 

   Nanoscale 8, 3572–3578 (2016) (pdf)

1. Broadband Black-Phosphorus Photodetectors with High Responsivity

   Mingqiang Huang, Mingliang Wang, Cheng Chen, Zongwei Ma, Xuefei Li, Junbo Han,and Yanqing Wu 

   Advanced Materials 28, 3481–3485 (2016) (pdf)

> Before 2016

1. 10. Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique

   Y. Q. Wu, M. Xu, P. D. Ye,,a
   Z. Cheng, J. Li, J.-S. Park, J. Hydrick, J. Bai, M. Carroll, J. G. Fiorenza, and A. Lochtefeld 

   APPLIED PHYSICS LETTERS 93, 242106
   2008 (pdf)

1. 9. Multi-probe interface characterization of In0.65Ga0.35As/Al2O3 MOSFET

   D. Varghese, Y. Xuan, Y. Q. Wu, T. Shen, P. D. Ye, and M. A. Alam  

   IEEE, 10.1109/IEDM.2008.4796699 (pdf)

1. 8. Top-gated graphene field-effect-transistors formed by decomposition of SiC

   Y. Q. Wu, P. D. Ye, M.A. Capano, Y. Xuan, Y. Sui, M. Qi, J.A. Cooper 

   Applied Physics Letters 92, 092192 (2008) (pdf)

1. 7. Epitaxially grown graphene field-effect transistors with electron mobility exceeding 1500 cm2/Vs and hole mobility exceeding 3400 cm2/Vs

   Yanqing Wu, P.D. Ye, M.A. Capano, Tian Shen, Yi Xuan, Yang Sui, Minghao Qi, J.A. Cooper 

   International Semiconductor Device Research Symposium 2007 (ISDRS 2007)

1. 6. (Invited) ALD High-k as a Common Gate Stack Solution for Nanoelectronics

   Peide Ye, Jiangjiang Gu, Yanqing Wu, Min Xu, Yi Xuan, Tian Shen and Adam Neal 

   International Electron Devices Meeting (IEDM 2007)

1. 5. Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics

   Y. Q. Wu, Y. Xuan, T. Shen, and P. D. Ye, Z. Cheng and A. Lochtefeld 

   APPLIED PHYSICS LETTERS 91, 022108
   2007 (pdf)

1. 4. Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics

   Y. Q. Wu, Y. Xuan, T. Shen, and P. D. Ye, Z. Cheng and A. Lochtefeld 

   APPLIED PHYSICS LETTERS 91, 022108
   2007 (pdf)

1. 3. Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited Al2O3/GaN metal-oxide-semiconductor structures

   Y. Q. Wu, T. Shen, and P. D. Ye, G. D. Wilk 

   APPLIED PHYSICS LETTERS 90, 143504
   2007 (pdf)

1. 2.Current transport and maximum dielectric strength of atomic-layer-deposited ultrathin Al2O3 on GaAs

   Y. Q. Wu, H. C. Lin, and P. D. Ye, G. D. Wilk 

   APPLIED PHYSICS LETTERS 90, 072105
   2007 (pdf)

1. 1.GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

   Y.Q. Wu , P.D. Ye , G.D. Wilk , B. Yang 

   Materials Science and Engineering: B, Volume 135, Issue 3, 15 December 2006 (pdf)

1. 3. 0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET

   Y. Q. Wu, W. K. Wang, O. Koybasi, D. N. Zakharov, E. A. Stach, S. Nakahara, P. D. Ye 

   Electron Device Letters, IEEE (Volume:30 , Issue: 7 ) (pdf)

1. 2. High Performance Deep-Submicron Inversion-Mode InGaAs MOSFETs with maximum Gm exceeding 1.1 mS/µm: New HBr pretreatment and channel engineering

   Y. Q. Wu, M. Xu, R.S. Wang, O. Koybasi and P. D. Ye 

   IEEE, 10.1109/IEDM.2009.5424358 (pdf)

1. 1. First experimental demonstration of 100 nm inversion-mode InGaAs FinFET through damage-free sidewall etching

   Y.Q. Wu, R.S. Wang, T. Shen, J.J. Gu and P. D. Ye 

   IEEE, 10.1109/IEDM.2009.5424356 (pdf)

1. 2. Scaling of InGaAs MOSFETs into deep-submicron regime (invited)

   Y.Q. Wu, J.J. Gu, and P.D. Ye 

   IEEE, 10.1109/ICIPRM.2010.5515918 (pdf)

1. 1. RF performance of short channel graphene field-effect transistor

   Y.Q. Wu, Y.-M. Lin, K.A. Jenkins, J.A. Ott, C. Dimitrakopoulos, D.B. Farmer, F. Xia, A. Grill, D.A. Antoniadis 

   IEEE, 10.1109/IEDM.2010.5703331 (pdf)

1. 4.Record high RF performance for epitaxial graphene transistors

   Y. Q. Wu, D. B. Farmer, A. Valdes-Garcia, W. J. Zhu, K.A. Jenkins, C. Dimitrakopoulos, Ph. Avouris and Y.-M. Lin 

   IEEE, 10.1109/IEDM.2011.6131601 (pdf)

1. 3.The origins and limits of metal–graphene junction resistance

   Fengnian Xia, Vasili Perebeinos, Yu-ming Lin, Yanqing Wu, Phaedon Avouris 

   Nature Nanotechnology 6, 179–184 (2011) doi:10.1038/nnano.2011.6

1. 2.High-frequency, scaled graphene transistors on diamond-like carbon

   Yanqing Wu, Yu-ming Lin, Ageeth A. Bol, Keith A. Jenkins, Fengnian Xia, Damon B. Farmer, Yu Zhu, Phaedon Avouris 

   Nature 472, 74–78 (07 April 2011) doi:10.1038/nature09979

1. 1. Wafer-Scale Graphene Integrated Circuit

   Yu-Ming Lin, Alberto Valdes-Garcia, Shu-Jen Han, Damon B. Farmer, Inanc Meric, Yanning Sun, Yanqing Wu, Christos Dimitrakopoulos, Alfred Grill, Phaedon Avouris, Keith A. Jenkins 

   Science 10 Jun 2011 , Vol. 332, Issue 6035, pp. 1294-1297 (pdf)

1. 5.Three-Terminal Graphene Negative Differential Resistance Devices

   Yanqing Wu, Damon B. Farmer, Wenjuan Zhu, Shu-Jen Han, Christos D. Dimitrakopoulos, Ageeth A. Bol, Phaedon Avouris, and Yu-Ming Lin 

   ACS Nano, 2012, 6 (3), pp 2610–2616

1. 4.Quantum Behavior of Graphene Transistors near the Scaling Limit

   Yanqing Wu, Vasili Perebeinos, Yu-ming Lin, Tony Low, Fengnian Xia, and Phaedon Avouris 

   Nano Lett., 2012, 12 (3), pp 1417–1423 (pdf)

1. 3.Tunable infrared plasmonic devices using graphene/insulator stacks

   Hugen Yan, Xuesong Li, Bhupesh Chandra, George Tulevski, Yanqing Wu, Marcus Freitag, Wenjuan Zhu, Phaedon Avouris, Fengnian Xia 

   Nature Nanotechnology 7, 330–334 (2012) doi:10.1038/nnano.2012.59

1. 2. State-of-the-Art Graphene High-Frequency Electronics

   Yanqing Wu, Keith A. Jenkins, Alberto Valdes-Garcia, Damon B. Farmer, Yu Zhu, Ageeth A. Bol, Christos Dimitrakopoulos, Wenjuan Zhu, Fengnian Xia, Phaedon Avouris, and Yu-Ming Lin 

   Nano Lett., 2012, 12 (6), pp 3062–3067 (pdf)

1. 1.Epitaxial Graphene Nanoribbon Array Fabrication Using BCP-Assisted Nanolithography

   Guanxiong Liu, Yanqing Wu, Yu-Ming Lin, Damon B. Farmer, John A. Ott, John Bruley, Alfred Grill, Phaedon Avouris, Dirk Pfeiffer, Alexander A. Balandin, and Christos Dimitrakopoulos 

   ACS Nano, 2012, 6 (8), pp 6786–6792 (pdf)

1. 2. Damping pathways of mid-infrared plasmons in graphene nanostructures

   Hugen Yan, Tony Low, Wenjuan Zhu, Yanqing Wu, Marcus Freitag, Xuesong Li, Francisco Guinea, Phaedon Avouris, Fengnian Xia 

   Nature Photonics 7, 394–399 (2013) doi:10.1038/nphoton.2013.57 (pdf)

1. 1.Graphene Electronics: Materials, Devices, and Circuits

   Yanqing Wu, Damon B. Farmer, Fengnian Xia, and Phaedon Avouris 

   IEEE Vol. 101, No. 7, July 2013 (pdf)

1. 4. Large, tunable magnetoresistance in non-magnetic III-V nanowires

   Sichao Li, Wei Luo, Jiangjiang Gu, Xiang Cheng, Peide D. Ye, and Yanqing Wu 

   Nano Letters 15,12, 8026–8031 (2015) (pdf)

1. 3. Noise in Graphene Superlattices Grown on Hexagonal Boron Nitride

   Xuefei Li, Xiaobo Lu, Tiaoyang Li, Wei Yang, Jianming Fang, Guangyu Zhang, and Yanqing Wu 

   ACS Nano 9, 11, 11382–11388 (2015) (pdf)

1. 2. Nearly Perfect Spin Filter Based on a Wire of Half-Metallic (η5−C5H5)Ti(η8−C8H8)Ti Units

   Sicong Zhu, Jianming Fang, Kailun Yao, and Yanqing Wu 

   Physical Review Applied 4, 014019 (2015) (pdf)

1. 1. Performance Potential and Limit of MoS2 Transistors

   Xuefei Li, Lingming Yang, Mengwei Si, Sichao Li, Mingqiang Huang, Peide Ye, Yanqing Wu 

   Advanced Materials 27, 1547–1552, (2015) (pdf)