Achievements

Current position:Website home page-Publications

Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85 C at Zero V-hold with Sub-10 ns Speed and 3-bit Operation

Author:Qianlan Hu, Qijun Li, Shenwu Zhu, Chengru Gu, Shiyuan Liu, Ru Huang and Yanqing Wu Publish:2022/11/27
Contact Address: Hubei Province Wuhan City Hongshan District Luo Yu Road No. 1037, Huazhong University of Science and Technology, East Campus, Postal Code: 430074, China Tel: 027-87792334-8118 E-mail: wulab_hust@163.com     Hubei ICP11002378 -15    Back-stage Management