High-Performance Bilayer WSe2 pFET with Record Ids = 425 μA/μm and Gm = 100 μS/μm at Vds = -1 V By Direct Growth and Fabrication on SiO2 Substrate
Author：Xinhang Shi, Xin Wang, Shiyuan Liu, Qi Guo, Lei Sun, Xuefei Li, Ru Huang, and Yanqing Wu Publish：2022/11/27