Top-Gate CVD WSe2 pFETs with Record-High Id~594 μA/μm, Gm~244 μS/μm and WSe2/MoS2 CFET based Half-adder Circuit Using Monolithic 3D Integration
Author：Xiong Xiong, Shiyuan Liu, Honggang Liu, Yang Chen, Xinhang Shi, Xin Wang, Xuefei Li, Ru Huang and Yanqing Wu Publish：2022/11/27