研究成果

当前位置:网站首页-学术论文

>2019

  1. 33. Nanometre-thin indium tin oxide for advanced high-performance electronics

    Shengman Li, Mengchuan Tian, Qingguo Gao, Mengfei Wang, Tiaoyang Li, Qianlan Hu, Xuefei Li & Yanqing Wu  

    Nature Materials (2019)


  1. 32. High-speed black phosphorus field-effect transistors approaching ballistic limit

    Xuefei Li, Zhuoqing Yu, Xiong Xiong, Tiaoyang Li, Tingting Gao, Runsheng Wang, Ru Huang and Yanqing Wu 

    Science Advances.Vol. 5, no. 6, eaau3194. (2019) (pdf)


  1. 31.Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D-3D heterostructure

    Tiaoyang Li , Xuefei Li , Mengchuan Tian , Qianlan Hu , Xin Wang , Sichao Li and Yanqing Wu 

    Nanoscale 11, 4701-4706 (2019) (pdf)


  1. 30. Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors

    Mengchuan Tian, Ben Hu, Haifang Yang, Chengchun Tang, Mengfei Wang, Qingguo Gao, Xiong Xiong, Zhenfeng Zhang, Tiaoyang Li, Xuefei Li, Changzhi Gu, Yanqing Wu 

    Advanced Electronic Materials,2019, 1800711 (pdf)


  1. 29. High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition

    Mengfei Wang, Xuefei Li, Xiong Xiong, Jian Song, Chengru Gu, Dan Zhan, Qianlan Hu, Shengman Li and Yanqing Wu 

    IEEE Electron Device Letters 40, 3, 419-422 (2019) (pdf)


  1. 28. Improvement of Conversion Loss of Resistive Mixers Using Bernal-stacked Bilayer Graphene

    Mengchuan Tian ; Xuefei Li ; Qingguo Gao ; Xiong Xiong ; Zhenfeng Zhang ; Yanqing Wu 

    IEEE Electron Device Letters 40, 325 - 328 (2019) (pdf)


  1. 27. Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiOx as Gate Dielectric

    Sichao Li ; Qianlan Hu ; Xin Wang ; Tiaoyang Li ; Xuefei Li ; Yanqing Wu 

    IEEE Electron Device Letters 40, 295 - 298 (2019) (pdf)


  1. 26. Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

    Xuefei Li, Jingyi Wu, Yunsheng Ye, Shengman Li, Tiaoyang Li, Xiong Xiong, Xiaole Xu, Tingting Gao, Xiaolin Xie, and Yanqing Wu 

    ACS Applied Materials Interfaces 11 (1), 1587–1594 (2019) (pdf)


>2018

  1. 25. Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric

    Lin Liang, Wei Li, Sichao Li, Xuefei Li, and Yanqing Wu 

    AIP Advances 8, 125314 (2018) (pdf)


  1. 24. Scalable high performance radio frequency electronics based on large domain bilayer MoS2

    Qingguo Gao, Zhenfeng Zhang, Xiaole Xu, Jian Song, Xuefei Li & Yanqing Wu  

    Nature Communications 9, 4778 (2018) (pdf)


  1. 23. High-performance transistors based on monolayer CVD MoS2 grown on molten glass

    Zhenfeng Zhang, Xiaole Xu, Jian Song, Qingguo Gao, Sichao Li, Qianlan Hu, Xuefei Li, and Yanqing Wu 

    Applied Physics Letters 113, 202103 (2018) (pdf)


  1. 22. Optimized Transport of Black Phosphorus Top Gate Transistors using Alucone Dielectrics

    Xuefei Li ; Xiong Xiong ; Tiaoyang Li ; Tingting Gao ; Yanqing Wu 

    IEEE Electron Device Letters 39, 12, 1952 - 1955 (2018) (pdf)


  1. 21. Channel Engineering of Normally-Off AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High-κ Dielectric

    Qianlan Hu, Sichao Li, Tiaoyang Li, Xin Wang, Xuefei Li and Yanqing Wu 

    IEEE Electron Device Letters 39, 9, 1377 - 1380 (2018) (pdf)


  1. 20. Black Phosphorus Radio Frequency Electronics at Cryogenic Temperatures

    Tiaoyang Li, Mengchuan Tian, Shengman Li, Mingqiang Huang, Xiong Xiong, Qianlan Hu, Sichao Li, Xuefei Li, Yanqing Wu 

    Advanced Electronic Materials 4, 1800138 (2018) (pdf)


  1. 19. Multifunctional devices from asymmetry

    Yanqing Wu 

    Nature Electronics 1, 331–332 (2018)


  1. 18. High Performance CVD Bernal-Stacked Bilayer Graphene Transistors for Amplifying and Mixing Signals at High Frequencies

    Mengchuan Tian, Xuefei Li, Tiaoyang Li, Qingguo Gao, Xiong Xiong, Qianlan Hu, Mengfei Wang, Xin Wang, and Yanqing Wu 

    ACS Applied Materials Interfaces 10 (24), 20219–20224 (2018) (pdf)


  1. 17. Optimized Transport Properties in Lithium Doped Black Phosphorus Transistors

    Tingting Gao, Xuefei Li, Xiong Xiong, Mingqiang Huang, Tiaoyang Li, and Yanqing Wu 

    IEEE Electron Device Letters 39, 5, 769 - 772 (2018) (pdf)


  1. 16. Anomalous Temperature Dependence in Metal–Black Phosphorus Contact

    Xuefei Li, Roberto Grassi, Sichao Li, Tiaoyang Li, Xiong Xiong, Tony Low, and Yanqing Wu 

    Nano Letters 18 (1), 26–31 (2018) (pdf)


  1. 15. High Performance Black Phosphorus Electronic and Photonic Devices with HfLaO Dielectric

    Xiong Xiong, Xuefei Li, Mingqiang Huang, Tiaoyang Li, Tingting Gao, and Yanqing Wu 

    IEEE Electron Device Letters 39, 127 - 130 (2018) (pdf)


  1. 14. Tunable Low-Frequency Noise in Dual-Gate MoS2 Transistors

    Xuefei Li, Tiaoyang Li, Zhenfeng Zhang, Xiong Xiong, Sichao Li, and Yanqing Wu 

    IEEE Electron Device Letters 39, 131-134 (2018) (pdf)


>2017

  1. 13. Gigahertz frequency doubler based on millimeter-scale single-crystal graphene

    Gao Qing-Guo, Tian Meng-Chuan, Li Si-Chao, Li Xue-Fei, Wu Yan-Qing 

    Acta Phys. Sin. 66, 21, 217305 (2017) (pdf)


  1. 12. Effect of Dielectric Interface on the Performance of MoS2 Transistors

    Xuefei Li, Xiong Xiong, Tiaoyang Li, Sichao Li, Zhenfeng Zhang, and Yanqing Wu 

    ACS Applied Materials and Interfaces 9 (51), 44602–44608 (2018) (pdf)


  1. 11. Multifunctional high-performance van der Waals heterostructures

    Mingqiang Huang, Shengman Li, Zhenfeng Zhang, Xiong Xiong, Xuefei Li & Yanqing Wu 

    Nature Nanotechnology 12, 1148–1154 (2017) (pdf)


  1. 10. Short-Channel Graphene Mixer With High Linearity

    Qingguo Gao, Xuefei Li, Mengchuan Tian, Xiong Xiong, Zhenfeng Zhang, and Yanqing Wu 

    IEEE Electron Device Letters 38, 1168 - 1171 (2017) (pdf)


  1. 9. High field transport of high performance black phosphorus transistors

    Tiaoyang Li, Zhenfeng Zhang, Xuefei Li, Mingqiang Huang, Sichao Li, Shengman Li, and Yanqing Wu 

    Applied Physics Letters 110, 163507 (2017) (pdf)


  1. 8. Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices

    Xuefei Li, Xiong Xiong, and Yanqing Wu 

    Chinese Physics B 26, 037307 (2017) (pdf)


>2016

  1. 7. Development of two-dimensional materials for electronic applications

    Xuefei Li, Tingting Gao, Yanqing Wu 

    Science China Information Sciences 59(6):1-14 (2016) (pdf)


  1. 6. Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors

    Xuefei Li, Yuchen Du, Mengwei Si, Lingming Yang, Sichao Li, Tiaoyang Li, Xiong Xiong, Peide Ye and Yanqing Wu 

    Nanoscale, 8, 3572–3578 (2016) (pdf)


  1. 5.Broadband Black-Phosphorus Photodetectors with High Responsivity

    Mingqiang Huang, Mingliang Wang, Cheng Chen, Zongwei Ma, Xuefei Li, Junbo Han,and Yanqing Wu 

    Advanced Materials 28, 3481–3485 (2016) (pdf)


>2015

  1. 4. Large, tunable magnetoresistance in non-magnetic III-V nanowires

    Sichao Li, Wei Luo, Jiangjiang Gu, Xiang Cheng, Peide D. Ye, and Yanqing Wu 

    Nano Letters 15,12, 8026–8031 (2015) (pdf)


  1. 3. Noise in Graphene Superlattices Grown on Hexagonal Boron Nitride

    Xuefei Li, Xiaobo Lu, Tiaoyang Li, Wei Yang, Jianming Fang, Guangyu Zhang, and Yanqing Wu 

    ACS Nano 9, 11, 11382–11388 (2015) (pdf)


  1. 2. Nearly Perfect Spin Filter Based on a Wire of Half-Metallic (η5−C5H5)Ti(η8−C8H8)Ti Units

    Sicong Zhu, Jianming Fang, Kailun Yao, and Yanqing Wu 

    Physical Review Applied 4, 014019 (2015) (pdf)


  1. 1. Performance Potential and Limit of MoS2 Transistors

    Xuefei Li, Lingming Yang, Mengwei Si, Sichao Li, Mingqiang Huang, Peide Ye, Yanqing Wu 

    Advanced Materials 27, 1547–1552, (2015) (pdf)


>2013

  1. 2. Damping pathways of mid-infrared plasmons in graphene nanostructures

    Hugen Yan, Tony Low, Wenjuan Zhu, Yanqing Wu, Marcus Freitag, Xuesong Li, Francisco Guinea, Phaedon Avouris, Fengnian Xia 

    Nature Photonics 7, 394–399 (2013) doi:10.1038/nphoton.2013.57 (pdf)


  1. 1.Graphene Electronics: Materials, Devices, and Circuits

    Yanqing Wu, Damon B. Farmer, Fengnian Xia, and Phaedon Avouris 

    IEEE Vol. 101, No. 7, July 2013 (pdf)


>2012

  1. 5.Three-Terminal Graphene Negative Differential Resistance Devices

    Yanqing Wu, Damon B. Farmer, Wenjuan Zhu, Shu-Jen Han, Christos D. Dimitrakopoulos, Ageeth A. Bol, Phaedon Avouris, and Yu-Ming Lin 

    ACS Nano, 2012, 6 (3), pp 2610–2616


  1. 4.Quantum Behavior of Graphene Transistors near the Scaling Limit

    Yanqing Wu, Vasili Perebeinos, Yu-ming Lin, Tony Low, Fengnian Xia, and Phaedon Avouris 

    Nano Lett., 2012, 12 (3), pp 1417–1423 (pdf)


  1. 3.Tunable infrared plasmonic devices using graphene/insulator stacks

    Hugen Yan, Xuesong Li, Bhupesh Chandra, George Tulevski, Yanqing Wu, Marcus Freitag, Wenjuan Zhu, Phaedon Avouris, Fengnian Xia 

    Nature Nanotechnology 7, 330–334 (2012) doi:10.1038/nnano.2012.59


  1. 2. State-of-the-Art Graphene High-Frequency Electronics

    Yanqing Wu, Keith A. Jenkins, Alberto Valdes-Garcia, Damon B. Farmer, Yu Zhu, Ageeth A. Bol, Christos Dimitrakopoulos, Wenjuan Zhu, Fengnian Xia, Phaedon Avouris, and Yu-Ming Lin 

    Nano Lett., 2012, 12 (6), pp 3062–3067 (pdf)


  1. 1.Epitaxial Graphene Nanoribbon Array Fabrication Using BCP-Assisted Nanolithography

    Guanxiong Liu, Yanqing Wu, Yu-Ming Lin, Damon B. Farmer, John A. Ott, John Bruley, Alfred Grill, Phaedon Avouris, Dirk Pfeiffer, Alexander A. Balandin, and Christos Dimitrakopoulos 

    ACS Nano, 2012, 6 (8), pp 6786–6792 (pdf)


> Before 2012

  1. 10. Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique

    Y. Q. Wu, M. Xu, P. D. Ye,,a Z. Cheng, J. Li, J.-S. Park, J. Hydrick, J. Bai, M. Carroll, J. G. Fiorenza, and A. Lochtefeld 

    APPLIED PHYSICS LETTERS 93, 242106 2008 (pdf)


  1. 9. Multi-probe interface characterization of In0.65Ga0.35As/Al2O3 MOSFET

    D. Varghese, Y. Xuan, Y. Q. Wu, T. Shen, P. D. Ye, and M. A. Alam  

    IEEE, 10.1109/IEDM.2008.4796699 (pdf)


  1. 8. Top-gated graphene field-effect-transistors formed by decomposition of SiC

    Y. Q. Wu, P. D. Ye, M.A. Capano, Y. Xuan, Y. Sui, M. Qi, J.A. Cooper 

    Applied Physics Letters 92, 092192 (2008) (pdf)


  1. 7. Epitaxially grown graphene field-effect transistors with electron mobility exceeding 1500 cm2/Vs and hole mobility exceeding 3400 cm2/Vs

    Yanqing Wu, P.D. Ye, M.A. Capano, Tian Shen, Yi Xuan, Yang Sui, Minghao Qi, J.A. Cooper 

    International Semiconductor Device Research Symposium 2007 (ISDRS 2007)


  1. 6. (Invited) ALD High-k as a Common Gate Stack Solution for Nanoelectronics

    Peide Ye, Jiangjiang Gu, Yanqing Wu, Min Xu, Yi Xuan, Tian Shen and Adam Neal 

    International Electron Devices Meeting (IEDM 2007)


  1. 5.Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics

    Y. Q. Wu, Y. Xuan, T. Shen, and P. D. Ye, Z. Cheng and A. Lochtefeld 

    APPLIED PHYSICS LETTERS 91, 022108 2007 (pdf)


  1. 4. Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics

    Y. Q. Wu, Y. Xuan, T. Shen, and P. D. Ye, Z. Cheng and A. Lochtefeld 

    APPLIED PHYSICS LETTERS 91, 022108 2007 (pdf)


  1. 3. Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited Al2O3/GaN metal-oxide-semiconductor structures

    Y. Q. Wu, T. Shen, and P. D. Ye, G. D. Wilk 

    APPLIED PHYSICS LETTERS 90, 143504 2007 (pdf)


  1. 2. Current transport and maximum dielectric strength of atomic-layer-deposited ultrathin Al2O3 on GaAs

    Y. Q. Wu, H. C. Lin, and P. D. Ye, G. D. Wilk 

    APPLIED PHYSICS LETTERS 90, 072105 2007 (pdf)


  1. 1.GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

    Y.Q. Wu , P.D. Ye , G.D. Wilk , B. Yang 

    Materials Science and Engineering: B, Volume 135, Issue 3, 15 December 2006 (pdf)


  1. 3. 0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET

    Y. Q. Wu, W. K. Wang, O. Koybasi, D. N. Zakharov, E. A. Stach, S. Nakahara, P. D. Ye 

    Electron Device Letters, IEEE (Volume:30 , Issue: 7 ) (pdf)


  1. 2.High Performance Deep-Submicron Inversion-Mode InGaAs MOSFETs with maximum Gm exceeding 1.1 mS/µm: New HBr pretreatment and channel engineering

    Y. Q. Wu, M. Xu, R.S. Wang, O. Koybasi and P. D. Ye 

    IEEE, 10.1109/IEDM.2009.5424358 (pdf)


  1. 1. First experimental demonstration of 100 nm inversion-mode InGaAs FinFET through damage-free sidewall etching

    Y.Q. Wu, R.S. Wang, T. Shen, J.J. Gu and P. D. Ye 

    IEEE, 10.1109/IEDM.2009.5424356 (pdf)


  1. 2. Scaling of InGaAs MOSFETs into deep-submicron regime (invited)

    Y.Q. Wu, J.J. Gu, and P.D. Ye 

    IEEE, 10.1109/ICIPRM.2010.5515918 (pdf)


  1. 1. RF performance of short channel graphene field-effect transistor

    Y.Q. Wu, Y.-M. Lin, K.A. Jenkins, J.A. Ott, C. Dimitrakopoulos, D.B. Farmer, F. Xia, A. Grill, D.A. Antoniadis 

    IEEE, 10.1109/IEDM.2010.5703331 (pdf)


  1. 4.Record high RF performance for epitaxial graphene transistors

    Y. Q. Wu, D. B. Farmer, A. Valdes-Garcia, W. J. Zhu, K.A. Jenkins, C. Dimitrakopoulos, Ph. Avouris and Y.-M. Lin 

    IEEE, 10.1109/IEDM.2011.6131601 (pdf)


  1. 3.The origins and limits of metal–graphene junction resistance

    Fengnian Xia, Vasili Perebeinos, Yu-ming Lin, Yanqing Wu, Phaedon Avouris 

    Nature Nanotechnology 6, 179–184 (2011) doi:10.1038/nnano.2011.6


  1. 2.High-frequency, scaled graphene transistors on diamond-like carbon

    Yanqing Wu, Yu-ming Lin, Ageeth A. Bol, Keith A. Jenkins, Fengnian Xia, Damon B. Farmer, Yu Zhu, Phaedon Avouris 

    Nature 472, 74–78 (07 April 2011) doi:10.1038/nature09979


  1. 1. Wafer-Scale Graphene Integrated Circuit

    Yu-Ming Lin, Alberto Valdes-Garcia, Shu-Jen Han, Damon B. Farmer, Inanc Meric, Yanning Sun, Yanqing Wu, Christos Dimitrakopoulos, Alfred Grill, Phaedon Avouris, Keith A. Jenkins 

    Science 10 Jun 2011 , Vol. 332, Issue 6035, pp. 1294-1297 (pdf)


联系地址:湖北省武汉市洪山区珞喻路1037号华中科技大学东校区 邮政编码:430074 联系电话:027-87792334-8118 电子邮箱:wulab_hust@163.com
鄂ICP备11002378号-1   后台管理