54. Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85 C at Zero V-hold with Sub-10 ns Speed and 3-bit Operation
作者：Qianlan Hu, Qijun Li, Shenwu Zhu, Chengru Gu, Shiyuan Liu, Ru Huang and Yanqing Wu 发布于：2022年11月27日