当前位置:网站首页-研究进展

铟镓砷纳米线的可控超强磁阻效应

作者:X.X. 发布于:2016年1月28日

Abstract:Magnetoresistance, the modulation of resistance by magnetic fields, has been adopted and continues to evolve in many device applications including hard-disk, memory, and sensors. Magnetoresistance in nonmagnetic semiconductors has recently raised much attention and shows great potential due to its large magnitude that is comparable or even larger than magnetic materials. However, most of the previous work focus on two terminal devices with large dimensions, typically of micrometer scales, which severely limit their performance potential and more importantly, scalability in commercial applications. Here, we investigate magnetoresistance in the impact ionization region in InGaAs nanowires with 20 nm diameter and 40 nm gate length. The deeply scaled dimensions of these nanowires enable high sensibility with less power consumption. Moreover, in these three terminal devices, the magnitude of magnetoresistance can be tuned by the transverse electric field controlled by gate voltage. Large magnetoresistance between 100% at room temperature and 2000% at 4.3 K can be achieved at 2.5 T. These nanoscale devices with large magnetoresistance offer excellent opportunity for future high-density large-scale magneto-electric devices using topdown fabrication approaches, which are compatible with commercial silicon platform.

联系地址:湖北省武汉市洪山区珞喻路1037号华中科技大学东校区 邮政编码:430074 联系电话:027-87792334-8118 电子邮箱:wulab_hust@163.com
鄂ICP备11002378号-1   后台管理