Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors
On March 19, 2020, ACS Applied Materials & Interfaces published the research results of low-frequency noise in Bernal-stacked bilayer graphene devices by professor Yanqing Wu from Wuhan National High Magnetic Field Center. The paper entitled " Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors ".
To date, the low-frequency noise in graphene devices has been studied extensively, and in some cases, bilayer graphene material shows an order of magnitude reduction in noise level compared to that of monolayer graphene. Here, we presented an experimental analysis of low-frequency noise in dual gate graphene transistors based on CVD-grown Bernal-stacked bilayer graphene. The results reveal an obvious M-shaped characteristic for the top-gate voltage dependent noise behavior at different fixed back-gate voltage, which can be well described by a charge-noise model. At 10 Hz, the minimal area normalized noise spectral density at room temperature reaches as low as 3×10-10 μm2·Hz-1, which is among the best results reported for graphene devices.
https://pubs.acs.org/doi/10.1021/acsami.9b21070
