High-performance transistors based on monolayer CVD MoS2 grown on molten glass

On November 14, 2018, Applied Physics Letters published the research results of high performance molybdenum disulfide (MoS₂) devices by Professor Yanqing Wu from Wuhan National High Magnetic Field Center. The paper entitled "High-performance transistors based on monolayer CVD MoS₂ grown on molten glass". The first author of this paper is Zhenfeng Zhang, a PhD student of Grade 2015 from school of optical and electronic information. The other authors from group members including Xiaole Xu, Jian Song, Qingguo Gao, Sichao Li, Qianlan Hu, Xuefei Li.

Transition metal dichalcogenides (TMDCs) are emerging two-dimensional materials for their potential in next-generation electronics. One of the big challenges is to realize a large single-crystal TMDCs film with high mobility, which is critical for channel materials. Herein, we report an optimized atmospheric pressure chemical vapor deposition method for growing large single-crystal monolayer MoS₂ on molten glass substrate with domain size up to 563 μm. Better interface quality can be achieved using high-κ dielectrics with respect to the conventional thermal SiO₂. Mobility up to 24 cm² V^-1 s^-1 at room temperature and 84 cm² V^-1 s^-1 at 20 K can be obtained. This low-cost growth of high-quality, large single-crystal size of two dimensional materials provides a pathway for high-performance two dimensional electronic devices.

Paper link: https://aip.scitation.org/doi/10.1063/1.5051781