High Performance Black Phosphorus Electronic and Photonic Devices with HfLaO Dielectric

On December 4, 2017, IEEE Electron Device Letters published the research results of high performance black phosphorus devices by professor Yanqing Wu from Wuhan National High Magnetic Field Center.The paper entitled " High Performance Black Phosphorus Electronic and Photonic Devices with HfLaO Dielectric ".

As an emerging two-dimensional material, few-layer black phosphorus (BP) shows great potential in nanoelectronics and nanophotonics due to its high carrier velocity. However, non-optimized gate dielectrics often degrade the performance of BP devices severely. In this letter, we demonstrate high-performance BP devices using a novel HfLaO as back gate dielectric with improved interface quality. High current exceeding 1.15 mA/μm has been achieved at 20 K for BP transistors with improved noise spectral density. Moreover, BP photodetectors with a record high photoresponsivity up to 1.5 × 10 8 A/W and fast response time of 10 μs at 300 K are demonstrated. Excellent photoresponse in a broadband spectrum range from 514 to 1800 nm at 70 K has also been achieved.

http://ieeexplore.ieee.org/document/8141876/