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Introduction

Author:XX Publish:2017/12/13

一、二维材料的与器件的微纳制造与表征

二维材料如石墨烯、二硫化钼、黑磷等,以及其器件的形貌表征、电性能表征等

[1].Xuefei Li et al. Performance Potential and Limit of MoS2 Transistors. Advanced Materials Volume 27, Issue 9, pages 1547–1552, March 4, 2015

[2].Xuefei Li et al. Noise in Graphene Superlattices Grown on Hexagonal Boron Nitride. ACS Nano. 5b05283, October 4, 2015

 二、III-VI族半导体器件的研究

有望取代Si材料的下一代高迁移率的III-VI族半导体器件,如砷化镓、InGaAS等器件的制备和电性能表征。

[1].Sichao Li et al. Large, tunable magnetoresistance in non-magnetic III-V nanowires. Nanolett. 5b03366 . November 13, 2015

[2].Sichao Li et al. Low temperature study of  GaAs MOSFETs with atomic layer epitaxial La203.IEEE ICSICT2014.

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